T2N4401 low power bipolar transistors page 1 10/04/06 v1.0 features: ? ? npn silicon planar epitaxial transistors. ? ? general purpose switching applications. to-92 plastic package dimensions : millimetres dimensions minimum maximum a 4.32 5.33 b 4.45 5.20 c 3.18 4.19 d 0.41 0.55 e 0.35 0.50 f 5 g 1.14 1.40 h 1.53 k 12.70 - l 1.982 2.082 pin configuration 1 = emitter 2 = base 3 = collector
T2N4401 low power bipolar transistors page 2 10/04/06 v1.0 absolute maximum ratings electrical characteristics (t a = 25c unless otherwise specified) rating symbol T2N4401 unit collector-emitter voltage v ceo 40 v collector-base voltage v cbo 60 emitter-base voltage v ebo 6 collector current continuous i c 600 ma power dissipation at t a = 25c derate above 25c p d 625 5.0 mw mw/c power dissipation at t c = 25c derate above 25c 1.5 12 w w/c operating and storage junction temperature range t j , t stg -55 to +150 c thermal resistance junction to case rth (j-c) 83.3 c/w junction to ambient rth (j-a) 200 characteristic symbol T2N4401 unit collector emitter voltage i c = 1ma, i b = 0 bv ceo * >40 v collector base voltage i c = 100 a, i e = 0 bv cbo >60 emitter base voltage i e = 100 a, i c = 0 bv ebo >6 base cut off current v ce = 35v, v eb = 0.4v i bev <0.1 a collector cut off current v ce = 35v, v eb = 0.4v i cex collector emitter saturation voltage i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma v ce (sat) * <0.4 <0.75 v base emitter saturation voltage i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma v be (sat) * 0.75 - 0.95 <1.2 *pulse test : pulse width: 300 s, duty 2.0%
T2N4401 low power bipolar transistors page 3 10/04/06 v1.0 electrical characteristics (t a = 25c unless otherwise specified) characteristic symbol T2N4401 unit dc current gain i c = 0.1ma, v ce = 1v i c = 1ma, v ce = 1v i c = 10ma, v ce = 1v i c = 150ma, v ce = 1v* i c = 500ma, v ce = 2v* h fe >20 >40 >80 100 - 300 >40 - dynamic characteristics small signal current gain i c = 1ma, v ce = 10v, f = 1khz h fe 40 - 500 - input impedance i c = 1ma, v ce = 10v, f = 1khz h ie 1.0 - 15 k ? *pulse test : pulse width: 300 s, duty 2.0% characteristic symbol 2n4401 unit voltage feedback ratio i c = 1ma, v ce = 10v, f = 1khz h re 0.1 - 8.0 x10 -4 output impedance i c = 1ma, v ce = 10v, f = 1khz h oe 1.0 - 30 ? collector-base capacitance v cb = 5v, i e = 0, f = 100khz v cb = 10v, i e = 0, f = 140khz c cb <6.5 - pf emitter-base capacitance v eb = 0.5v, i c = 0, f = 100khz c eb <30 transition frequency i c = 20ma, v ce = 10v, f = 100mhz f t >250 mhz switching characteristics v cc = 30v, v eb = 2v i c = 150ma, i b1 = 15ma delay time t d <15 ns rise time t r <20 v cc = 30v, i c = 150ma i b1 = i b2 = 15ma storage time t s <225 ns fall time t f <30
T2N4401 low power bipolar transistors page 4 10/04/06 v1.0 dc current gain i c collector current (ma) dc current gain h fe , dc current gain (normalized) v ce , collector-emitter voltage (v) i c collector current (ma) voltage (v) on voltages i b base current (ma)
T2N4401 low power bipolar transistors page 5 10/04/06 v1.0 v ce, collector-emitter voltage (v) i b base current (ma) h fe , dc current gain (normalized) collector saturation region dc current gain i c collector current (ma)
T2N4401 low power bipolar transistors page 6 10/04/06 v1.0 on voltages voltage (v) i c collector current (ma) package part number to-92 2n4401 part number table
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